Reduction of sti corner defects during spe in semicondcutor device fabrication using dsb substrate and hot technology

A method of fabricating a semiconductor device, comprising:

• forming a direct silicon bonded substrate wherein a second silicon layer with one of a (100) or (110) crystal orientation is bonded to a first silicon layer of a handle substrate with the other of the (100) or (110) crystal orientation;
• forming a pad oxide layer over the second silicon layer;
• forming a nitride layer over the pad oxide layer;
• forming an isolation trench within the direct silicon bonded substrate through the second silicon layer and into the first silicon layer;
• after forming the isolation trench, performing a patterned implant to amorphize a region of the second silicon layer;
• performing solid phase epitaxy at a temperature of less than about 700° C. to recrystallize the amorphized region of the second silicon layer to the same crystal orientation as the first silicon layer;
• and
• after performing the solid phase epitaxy, filling the isolation trench with an isolation material.

A method of fabricating a semiconductor device, comprising:

• forming a direct silicon bonded substrate wherein a second silicon layer with a (110) crystal orientation is bonded to a first silicon layer of a handle substrate with the (100) crystal orientation;
• forming a hardmask over the second silicon layer, the hardmask comprising a silicon oxide layer and a silicon nitride layer;
• patterning the hardmask with an opening, and etching the second silicon layer and at least a portion of the first silicon layer through the opening to form an isolation trench to separate PMOS and NMOS active areas within the direct silicon bonded substrate;
• after forming the isolation trench, performing a patterned implant to amorphize the second silicon layer selectively in the NMOS active area;
• performing solid phase epitaxy at a temperature of less than about 700° C. to recrystallize the amorphized region of the second silicon layer to the same crystal orientation as the first silicon layer;
• and
• after performing the solid phase epitaxy, filling the isolation trench with an isolation material by growing an oxide liner on sidewalls of the isolation trench, forming a layer of oxide including over the oxide liner within the trench, and mechanically planarizing the layer of oxide to remove portions outside the isolation trench.