US 2010/0304538 A1Published application

Semiconductor device and method of manufacturing the same

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsKunio HOSOYA, Saishi FUJIKAWA

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Abstract

To reduce variation among TFTs in manufacture of a semiconductor device including n-type thin film transistors and p-type thin film transistors. Further, another object of the present invention is to reduce the number of masks and manufacturing steps, and manufacturing time. A method of manufacturing a semiconductor device includes forming an island-shaped semiconductor layer of a first thin film transistor, then, forming an island-shaped semiconductor layer of the second thin film transistor. In the formation of the island-shaped semiconductor layer of the second thin film transistor, a gate insulating film in contact with the island-shaped semiconductor layer of the second thin film transistor is used as a protection film (an etching stopper film) for the island-shaped semiconductor layer of the first thin film transistor.

Claims16

Dependent claims

A method of manufacturing a semiconductor device, comprising:

forming a first gate electrode and a second gate electrode;
forming a first gate insulating film, a first non-doped semiconductor film, and a first doped semiconductor film including one of n-type and p-type conductivity in that order over the first gate electrode and the second gate electrode;
removing the first non-doped semiconductor film and the first doped semiconductor film to form a first island-shaped semiconductor layer in which a first non-doped semiconductor layer and a first doped semiconductor layer are stacked in that order over the first gate electrode, and to expose the first gate insulating film formed over the second gate electrode;
removing the exposed first gate insulating film to expose the second gate electrode;
forming a second gate insulating film, a second non-doped semiconductor film, and a second doped semiconductor film including the other one of n-type and p-type conductivity in that order over the exposed second gate electrode and the first island-shaped semiconductor layer;
removing the second non-doped semiconductor film and the second doped semiconductor film by a first etching to faun a second island-shaped semiconductor layer in which a second non-doped semiconductor layer and a second doped semiconductor layer are stacked in that order over the second gate electrode, and to expose the second gate insulating film formed over the first island-shaped semiconductor layer;
removing the exposed second gate insulating film by a second etching to expose the first island-shaped semiconductor layer;
forming a wiring over the first island-shaped semiconductor layer and the second island-shaped semiconductor layer;
and
partially removing the first doped semiconductor film and the second doped semiconductor film using the wiring as a mask.

7 more elements

A method of manufacturing a semiconductor device, comprising:

forming a first gate electrode and a second gate electrode;
forming a first gate insulating film, a first non-doped semiconductor film, and a first doped semiconductor film including one of n-type and p-type conductivity in that order over the first gate electrode and the second gate electrode;
removing the first non-doped semiconductor film and the first doped semiconductor film to form a first island-shaped semiconductor layer in which a first non-doped semiconductor layer and a first doped semiconductor layer are stacked in that order over the first gate electrode, and to expose the first gate insulating film formed over the second gate electrode;
forming a second gate insulating film, a second non-doped semiconductor film, and a second doped semiconductor film including the other one of n-type and p-type conductivity in that order over the exposed first gate insulating film and the first island-shaped semiconductor layer;
removing the second non-doped semiconductor film and the second doped semiconductor film by a first etching to form a second island-shaped semiconductor layer in which a second non-doped semiconductor layer and a second doped semiconductor layer are stacked in that order, and to expose the second gate insulating film formed over the first island-shaped semiconductor layer;
removing the exposed second gate insulating film by a second etching to expose the first island-shaped semiconductor layer;
forming a wiring over the first island-shaped semiconductor layer and the second island-shaped semiconductor layer;
and
partially removing the first doped semiconductor film and the second doped semiconductor film using the wiring as a mask.

6 more elements

A method of manufacturing a semiconductor device, comprising:

forming a first gate electrode and a second gate electrode;
forming a first gate insulating film, a first non-doped semiconductor film, and a first doped semiconductor film including one of n-type and p-type conductivity in that order over the first gate electrode and the second gate electrode;
removing the first non-doped semiconductor film and the first doped semiconductor film to form a first island-shaped semiconductor layer in which a first non-doped semiconductor layer and a first doped semiconductor layer are stacked in that order over the first gate electrode, and to expose the first gate insulating film formed over the second gate electrode;
removing the exposed first gate insulating film to expose the second gate electrode;
forming a second gate insulating film, a second non-doped semiconductor film, and a second doped semiconductor film including the other one of n-type and p-type conductivity in that order over the exposed second gate electrode and the first island-shaped semiconductor layer, wherein the second gate insulating film has a different thickness from the first gate insulating film;
removing the second non-doped semiconductor film and the second doped semiconductor film by a first etching to form a second island-shaped semiconductor layer in which a second non-doped semiconductor layer and a second doped semiconductor layer are stacked in that order over the second gate electrode, and to expose the second gate insulating film formed over the first island-shaped semiconductor layer;
removing the exposed second gate insulating film by a second etching to expose the first island-shaped semiconductor layer;
forming a wiring over the first island-shaped semiconductor layer and the second island-shaped semiconductor layer;
and
partially removing the first doped semiconductor film and the second doped semiconductor film using the wiring as a mask.

7 more elements

A method of manufacturing a semiconductor device, comprising:

forming a first gate electrode and a second gate electrode;
forming a first gate insulating film, a first non-doped semiconductor film, and a first doped semiconductor film including one of n-type and p-type conductivity in that order over the first gate electrode and the second gate electrode;
removing the first non-doped semiconductor film and the first doped semiconductor film to form a first island-shaped semiconductor layer in which a first non-doped semiconductor layer and a first doped semiconductor layer are stacked in that order over the first gate electrode, and to expose the first gate insulating film formed over the second gate electrode;
forming a second gate insulating film, a second non-doped semiconductor film, and a second doped semiconductor film including the other one of n-type and p-type conductivity in that order over the exposed first gate insulating film and the first island-shaped semiconductor layer, wherein the second gate insulating film has a different thickness from the first gate insulating film;
removing the second non-doped semiconductor film and the second doped semiconductor film by a first etching to form a second island-shaped semiconductor layer in which a second non-doped semiconductor layer and a second doped semiconductor layer are stacked in that order, and to expose the second gate insulating film formed over the first island-shaped semiconductor layer;
removing the exposed second gate insulating film by a second etching to expose the first island-shaped semiconductor layer;
forming a wiring over the first island-shaped semiconductor layer and the second island-shaped semiconductor layer;
and
partially removing the first doped semiconductor film and the second doped semiconductor film using the wiring as a mask.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/842,070Filed 23 Jul 2010
Priority: JP 2007-01966230 Jan 2007
Published: 2 Dec 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
H10D 86/0221
Of multiple TFTs: comprising manufacture, treatment or patterning of TFT semiconductor bodies
H10D 86/40
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
H10D 86/431
Characterised by multiple TFTs: having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs

Family

Application12/016,767Division · filed 18 Jan 2008
Application12/842,070Division
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From the US filing history. Foreign family members aren’t listed.