Method of enhancing the conductive and optical properties of deposited indium tin oxide (ITO) thin films

A method of making a photovoltaic device, the method comprising:

• providing a substantially transparent substrate;
• disposing a layer comprising indium tin oxide (ITO), directly or indirectly, on the substrate;
• and
• heating the layer comprising ITO in a low oxygen environment to a temperature of at least 475 degrees C. for at least 10 minutes so as to provide for (1) a post-baked sheet resistance of the layer comprising ITO that is below a sheet resistance of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the layer comprising ITO that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the layer comprising ITO that is above the reflectivity of the corresponding air-baked ITO thin film.

A method of making an electronic device, the method comprising:

• providing a substrate having a layer comprising indium tin oxide (ITO) formed, directly or indirectly, thereon;
• heating the layer comprising ITO in a low oxygen environment to a temperature of at least 475 degrees C. for no more than 60 minutes to activate the layer comprising ITO, such that the layer comprising ITO has a sheet resistance lower than a sheet resistance of a corresponding layer comprising ITO activated in air-inclusive environment at a temperature no greater than 350 degrees C.;
• and
• building the substrate into the electronic device.