Ion implantation fabrication process for thin-film crystalline silicon solar cells
AssigneeSolexel, Inc.
InventorsVirendra V. Rana, Pawan Kapur, Mehrdad M. Moslehi
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Abstract
A front contact thin-film solar cell is formed on a thin-film crystalline silicon substrate. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation processes. In yet another embodiment, a back contact thin-film solar cell is formed on a thin-film crystalline silicon substrate. Emitter regions, selective emitter regions, base regions, and a front surface field are formed through ion implantation processes.
Claims24
A method for the fabrication of a front contact thin-film crystalline silicon solar cell from a thin-film crystalline silicon substrate, the method comprising:
- implanting ions of an element in said thin-film silicon substrate to form emitter regions on the front surface of said thin-film silicon substrate;
- implanting ions of an element in said thin-film silicon substrate to form selective emitter regions;
- implanting ions of an element in said thin-film silicon substrate to form a back surface field on the back surface of said thin-film silicon substrate;
- and
- forming selective metallization contacts on said selective emitter regions and selective metallization contacts on said back surface field.
A method for the fabrication of an all back contact thin-film crystalline silicon solar cell from a thin-film silicon substrate, the method comprising:
- implanting ions of an element in said thin-film silicon substrate to form emitter regions;
- implanting ions of an element in said thin-film silicon substrate to form selective emitter regions;
- implanting ions of an element in said thin-film silicon substrate to form a front surface field;
- implanting ions of an element in said thin-film silicon substrate to form base regions;
- and
- forming selective metallization contacts on said selective emitter regions and said base regions.
Dependencies are inferred from the claim text.