Method for manufacturing semiconductor device
AssigneeSony Corporation
InventorSusumu Hiyama
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Abstract
Disclosed herein is a method for making a semiconductor device including the steps of: forming a light-receiving portion for carrying out photoelectric conversion in a semiconductor substrate; forming an insulating film to cover a light-receiving side of the semiconductor substrate; forming a metallic light-shielding film to partly cover the insulating film in correspondence to the light-receiving portion; and heating the metallic light-shielding film by irradiation of the metallic light-shielding film with a microwave to permit selective annealing of a laminated portion with the metallic light-shielding film in the insulating film.
Claims5
A method for making a semiconductor device comprising the steps of:
- forming a light-receiving portion for carrying out photoelectric conversion in a semiconductor substrate;
- forming an insulating film to cover a light-receiving side of said semiconductor substrate;
- forming a metallic light-shielding film to partly cover said insulating film in correspondence to the light-receiving portion;
- and
- heating said metallic light-shielding film by irradiation of said metallic light-shielding film with a microwave to permit selective annealing of a laminated portion with said metallic light-shielding film in said insulating film.
Dependencies are inferred from the claim text.