Low Temperature Deposition of Silicon-Containing Films

A process to deposit silicon oxide or carbon-doped silicon oxide on a substrate in a processing chamber, comprising:

• a. contacting the substrate with an oxygen-containing source to absorb at least a portion of the oxygen-containing source on the substrate;
• b. purging unabsorbed oxygen-containing source;
• c. contacting the substrate with a silicon-containing precursor to react with the portion of the absorbed oxygen-containing source;
• and
• d. purging unreacted silicon-containing source.

A process to deposit silicon oxynitride or carbon-doped silicon oxynitride on a substrate in a processing chamber, comprising:

• a. contacting the substrate with a mixture of an oxygen-containing source and a nitrogen-containing source to absorb at least a portion of the oxygen-containing source and at least a portion of the nitrogen-containing source on the substrate;
• b. purging unabsorbed oxygen-containing source and nitrogen-containing source;
• c. contacting the substrate with a silicon-containing precursor to react with the portion of the absorbed oxygen-containing source and nitrogen-containing source;
• and
• d. purging unreacted silicon-containing source.