Method of aftertreatment of amorphous hydrocarbon film and method for manufacturing electronic device by using the aftertreatment method
AssigneeTokyo Electron Limited
InventorHiraku Ishikawa
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Abstract
Functional groups on the outermost surface of an amorphous hydrocarbon film are substituted. The amorphous hydrocarbon film is formed on a silicon substrate Sub, which is coated with a low-k film. A heat treatment is performed on the amorphous hydrocarbon film in a non-silane gas atmosphere. Next, a heat treatment is performed on the amorphous hydrocarbon film in a silane gas atmosphere immediately after the heat treatment in a non-silane gas atmosphere. After the heat treatment, a film, such as a hard mask, is formed.
Claims17
A method of aftertreatment of an amorphous hydrocarbon film, the method comprising:
- forming an amorphous hydrocarbon film on a substrate;
- and
- performing a heat treatment on the amorphous hydrocarbon film in a SixHy based gas atmosphere while supplying the SixHy based gas at desired time points.
A method for manufacturing an electronic device, the method comprising:
- forming an amorphous hydrocarbon film on a substrate;
- and
- performing a heat treatment on the amorphous hydrocarbon film in a SixHy based gas atmosphere while supplying the SixHy based gas at desired time points.
A treating system for manufacturing an electronic device, the treating system comprising:
- a film formation processing apparatus and a heat treatment processing apparatus;
- the treating system forms an amorphous hydrocarbon film on a substrate by using the film formation processing apparatus, and
- the treating system performs a heat treatment on the amorphous hydrocarbon film in a SixHy based gas atmosphere by the heat treatment processing apparatus while supplying the SixHy based gas at desired time points.
Dependencies are inferred from the claim text.