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US 2010/0303116 A1Published application
Semiconductor laser device and optical apparatus employing the same
AssigneeSanyo Electric Co., Ltd.
InventorsYoshiki Murayama, Shingo Kameyama
Life of this patent
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Abstract
This semiconductor laser device includes a semiconductor element layer having an active layer and a cavity facet and a facet coating film arranged on the cavity facet, while the facet coating film includes an oxide film made of hafnium silicate (HfSiO) or hafnium aluminate (HfAlO), and the facet coating film further has a nitrogen-containing film, in contact with the cavity facet, between the cavity facet and the oxide film.
Claims20
A semiconductor laser device comprising:
- a semiconductor element layer having an active layer and a cavity facet;
- and
- a facet coating film arranged on said cavity facet, wherein
- said facet coating film includes an oxide film made of hafnium silicate (HfSiO) or hafnium aluminate (HfAlO), and
- said facet coating film further has a nitrogen-containing film, in contact with said cavity facet, between said cavity facet and said oxide film.
2 more elements
A semiconductor laser device comprising:
- a semiconductor element layer having an active layer and a cavity facet;
- and
- a facet coating film arranged on said cavity facet, wherein
- said facet coating film includes an oxide film made of hafnium silicate (HfSiO) containing nitrogen or hafnium aluminate (HfAlO) containing nitrogen, and
- said oxide film is in contact with said cavity facet.
2 more elements
An optical apparatus comprising:
- a semiconductor laser device including a semiconductor element layer provided with an active layer and a cavity facet and a facet coating film arranged on said cavity facet;
- and
- an optical system adjusting a laser beam emitted from said semiconductor laser device, wherein
- said facet coating film has an oxide film made of hafnium silicate (HfSiO) or hafnium aluminate (HfAlO),
- said facet coating film further has a nitrogen-containing film, in contact with said cavity facet, between said cavity facet and said oxide film, or
- said oxide film further contains nitrogen, and is in contact with said cavity facet.
3 more elements
Dependencies are inferred from the claim text.