Semiconductor laser
AssigneeSony Corporation
InventorTomoyuki Kosugi
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Abstract
The invention provides a semiconductor laser realizing reduction in an internal loss of light without thickening a cladding layer. The semiconductor laser includes a semiconductor layer on a semiconductor substrate. The semiconductor layer has, in order from the semiconductor substrate side, a lower cladding layer, an active layer, an upper cladding layer, and a contact layer, and has a first low-refractive-index layer having a refractive index lower than that of the upper cladding layer between the upper cladding layer and the contact layer.
Claims10
A semiconductor laser comprising a semiconductor layer on a semiconductor substrate,
- wherein the semiconductor layer has, in order from the semiconductor substrate side, a lower cladding layer, an active layer, an upper cladding layer, and a contact layer, and has a first low-refractive-index layer having a refractive index lower than that of the upper cladding layer between the upper cladding layer and the contact layer.
A semiconductor laser comprising a semiconductor layer on a semiconductor substrate,
- wherein the semiconductor layer has, in order from the semiconductor substrate side, a lower cladding layer, an active layer, an upper cladding layer, and a contact layer, and has a second low-refractive-index layer having a refractive index lower than that of the lower cladding layer between the lower cladding layer and the semiconductor substrate.
Dependencies are inferred from the claim text.