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US 2010/0302860 A1Published application
Nonvolatile memory device and method of programming the same
AssigneeHynix Semiconductor Inc.
InventorSeung Min Oh
Life of this patent
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AssigneeHynix Semiconductor Inc.
InventorSeung Min Oh
Estimating the term…
A nonvolatile memory device includes a memory cell array, including a first memory cell group configured to store data and a second memory cell group configured to store operation information, including first and second program start voltages, a page buffer unit, including page buffers each configured to store program data for memory cells or store data read from the memory cells, and a control unit configured to, when a program operation is first performed after power is supplied, count a number of program pulses until a verification operation using a first verification voltage is a pass, compare the counted number and a first number of program pulses, select either the first or second program start voltages according to a result of the comparison, and control the program operation to be performed using the selected program start voltage until the power is off.
A nonvolatile memory device, comprising:
A method of operating a nonvolatile memory device, the method comprising:
A semiconductor memory device, comprising memory cells for a program and page buffers for temporarily storing data to be programmed in the memory cells or reading data stored in the memory cells and temporarily storing the read data, the semiconductor memory device comprising:
A method of programming a semiconductor memory device, the method comprising:
Dependencies are inferred from the claim text.