Nonvolatile memory device and method of programming the same
AssigneeHynix Semiconductor Inc.
InventorIn Soo WANG
Life of this patent
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Abstract
A nonvolatile memory device includes a high voltage generation unit configured to generate a program voltage and a pass voltage, a block selection unit coupled to the high voltage generation unit through global word lines, a memory cell array coupled to the block selection unit through word lines, a discharge unit coupled to the global word lines and configured to change a level of voltage supplied to the global word lines, and a discharge control unit configured to generate a discharge signal, and transfer the discharge signal to the discharge unit in response to the program voltage.
Claims14
A nonvolatile memory device, comprising:
- a high voltage generation unit configured to generate a program voltage and a pass voltage;
- a block selection unit coupled to the high voltage generation unit through global word lines;
- a memory cell array coupled to the block selection unit through word lines;
- a discharge unit coupled to the global word lines and configured to change a level of voltage supplied to the global word lines;
- and
- a discharge control unit configured to generate a discharge signal, and transfer the discharge signal to the discharge unit in response to the program voltage.
A method of programming a nonvolatile memory device, the method comprising:
- performing a program operation using an increasing step pulse program (ISPP) method,
- wherein a time duration during which a program voltage is supplied to selected memory cells is gradually reduced according to a rise in a level of the program voltage.
A method of programming a nonvolatile memory device, the method comprising:
- supplying an (n−1)th program voltage to a selected word line during an (n−1)th time period;
- performing an (n−1)th verification operation;
- and
- if a result of the verification operation is a failure, supplying an nth program voltage, having a higher voltage level than the (n−1)th program voltage, to the selected word line during an nth time period shorter than the (n−1)th time period,
- wherein ‘n’ is a natural number.
A method of programming a nonvolatile memory device, the method comprising:
- a program voltage supply period in which a program operation is performed on selected memory cells;
- and
- a verification period in which a verification operation is performed on the selected memory cells,
- wherein if a result of the verification operation in the verification period is a pass, the program operation is completed, and if the result of the verification operation in the verification period is a failure, the program voltage supply period and the verification period are repeatedly performed, until the program operation on the selected memory cells is completed, wherein the program voltage supply period is shorter than a previous program voltage supply period.
Dependencies are inferred from the claim text.