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US 2010/0302843 A1Published application
Spin Transfer Torque - Magnetic Tunnel Junction Device and Method of Operation
AssigneeQUALCOMM Incorporated
InventorsXia Li, Kangho Lee, Xiaochun Zhu, Seung H. Kang
Life of this patent
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Abstract
A method is disclosed that includes controlling current flow direction for current sent over a source line or a bit line of a magnetic memory device. A current generated magnetic field assists switching of a direction of a magnetic field of a free layer of a magnetic element within a spin transfer torque magnetic tunnel junction (STT-MTJ) device.
Claims42
A method comprising controlling current flow direction for current to be sent over at least one of a source line and a bit line to generate a current-generated magnetic field to assist switching of a direction of a magnetic field of a free layer of a magnetic memory element within a spin transfer torque magnetic tunnel junction (STT-MTJ) device.
An apparatus comprising:
- a spin transfer torque magnetic tunnel junction (STT-MTJ) device including a free layer associated with a magnetic field;
- a bit line in electronic communication with the STT-MTJ device;
- a source line in electronic communication with the STT-MTJ device;
- and
- a control logic circuit configured to control a current flow direction for current to be sent over the source line or the bit line to generate a current-generated magnetic field that assists switching of a direction of the magnetic field associated with the free layer of the STT-MTJ device.
2 more elements
A computer readable tangible medium storing instructions executable by a computer, the instructions comprising:
- instructions that are executable by the computer to automatically control current flow direction for current to be sent over a source line or a bit line to generate a magnetic field,
- wherein the current-generated magnetic field is applied to assist switching of a direction of a magnetic field of a free layer of a magnetic memory element within a spin transfer torque magnetic tunnel junction (STT-MTJ) device.
An apparatus, comprising:
- a first current path supporting current flow through a plurality of spin transfer torque magnetic tunnel junction (STT-MTJ) devices in a fixed direction;
- and
- a second current path supporting current flow through the plurality of STT-MTJ devices in an opposite direction to the fixed direction.
An apparatus comprising:
- spin transfer torque magnetic tunnel junction (STT-MTJ) means for storing data;
- and
- means for controlling current flow direction for current to be sent over a source line or a bit line to generate a current-generated magnetic field to assist switching of a direction of a magnetic field of a free layer of a magnetic element within the STT-MTJ means for storing data.
A method comprising:
- receiving design information including physical positioning information of a packaged semiconductor device on a circuit board, the packaged semiconductor device including a semiconductor structure comprising:
- a spin transfer torque magnetic tunnel junction (STT-MTJ) device including a free layer associated with a magnetic field;
- a bit line in electronic communication with the STT-MTJ device;
- a source line in electronic communication with the STT-MTJ device;
- and
- a control logic circuit configured to control a current flow direction for current sent to the source line or the bit line to generate a current generated magnetic field to assist switching of a direction of the magnetic field associated with the free layer of the STT-MTJ device;
- and
- transforming the design information to generate a data file.
5 more elements
A method comprising:
- a first step for controlling current flow direction for current to be sent over at least one of a source line and a bit line to generate a current-generated magnetic field to assist switching of a direction of a magnetic field of a free layer of a magnetic memory element within a spin transfer torque magnetic tunnel junction (STT-MTJ) device;
- and
- a second step for selectively setting the current flow direction to assist with the switching of the direction of the magnetic field of the free layer.
A method comprising:
- receiving a data file comprising design information corresponding to a semiconductor device;
- and
- fabricating the semiconductor device according to the design information, wherein the semiconductor device comprises:
- a spin transfer torque magnetic tunnel junction (STT-MTJ) device including a free layer associated with a magnetic field;
- a bit line in electronic communication with the STT-MTJ device;
- a source line in electronic communication with the STT-MTJ device;
- and
- a control logic circuit configured to control a current flow direction for current sent to the source line or the bit line to generate a current generated magnetic field to assist switching of a direction of the magnetic field associated with the free layer of the STT-MTJ device.
5 more elements
A method comprising:
- receiving a data file comprising design information comprising physical positioning information of a packaged semiconductor device on a circuit board;
- and
- manufacturing the circuit board configured to receive the packaged semiconductor device according to the design information, wherein the packaged semiconductor device comprises:
- a spin transfer torque magnetic tunnel junction (STT-MTJ) device including a free layer associated with a magnetic field;
- a bit line in electronic communication with the STT-MTJ device;
- a source line in electronic communication with the STT-MTJ device;
- and
- a control logic circuit configured to control a current flow direction for current sent to the source line or the bit line to generate a current generated magnetic field to assist switching of a direction of the magnetic field associated with the free layer of the STT-MTJ device.
5 more elements
Dependencies are inferred from the claim text.