Voltage converters with integrated low power leaker device and associated methods

A voltage converter, comprising:

• a primary winding with a first terminal and a second terminal, the first terminal being coupled to a DC input voltage;
• a secondary winding electromagnetically coupled to the first winding;
• a controller electrically coupled to the secondary winding;
• and
• a semiconductor device comprising at least two types of cells on a single semiconductor substrate, the semiconductor device comprising a drain terminal coupled to the second terminal of the primary winding, a gate terminal coupled to the controller, and a first source terminal and a second source terminal coupled to the controller.

A method for fabricating a semiconductor device, comprising:

• forming an epitaxial layer of a first low doping type on a highly doped substrate as a drain of the semiconductor device;
• growing a gate oxide and gate polysilicon layer on the epitaxial layer;
• forming bodies of a plurality of DMOS cells and gates of a JFET cell of a second doping type;
• forming sources of the DMOS cells in the bodies and the JFET cell of a first heavily doping type;
• and
• creating electrical short between the bodies and the sources of the VDMOS cells.