Method for fabrication of ceramic dielectric films on copper foils
AssigneeUchicago Argonne, LLC
InventorsBeihai MA, Manoj NARAYANAN, Stephen E. DORRIS, Uthamalingam BALACHANDRAN
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AssigneeUchicago Argonne, LLC
InventorsBeihai MA, Manoj NARAYANAN, Stephen E. DORRIS, Uthamalingam BALACHANDRAN
Estimating the term…
The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.
A method for fabricating a ceramic film on a copper substrate, the method comprising the steps of:
A method for fabricating a lead-lanthanum-zirconium-titanium (PLZT) ceramic film on a copper substrate, the method comprising the steps of:
Dependencies are inferred from the claim text.