Power Switching Devices Having Controllable Surge Current Capabilities

A power semiconductor switch that conducts an output current when in an on-state, comprising:

• a first wide band-gap semiconductor device that has a first switching speed;
• a second wide band-gap semiconductor device that has a second switching speed that is slower than the first switching speed;
• wherein the power semiconductor switch is configured so that the output current flows through the first wide band-gap semiconductor device for a first range of output current levels;
• and
• the power semiconductor switch is further configured so that the output current flows through both the first and second wide band-gap semiconductor devices for a second range of output current levels that are higher than the output current levels in the first range of output current levels.

A power switching device, comprising:

• a first wide band-gap MISFET having a gate, a first source/drain region and a second source/drain region;
• a second wide band-gap MISFET having a gate, a first source/drain region and a second source/drain region;
• and
• a wide band-gap bipolar junction transistor (“BJT”) having a base, a collector and an emitter;
• wherein the gate of the first wide band-gap MISFET is electrically connected to the gate of the second wide band-gap MISFET;
• wherein the first source/drain region of the first wide band-gap MISFET is electrically connected to the first source/drain region of the second wide band-gap MISFET and to the collector;
• wherein the second source/drain region of the first wide band-gap MISFET is electrically connected to the emitter;
• and
• wherein the second source/drain region of the second wide band-gap MISFET is electrically connected to the base.