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US 2010/0301922 A1Published application
Field effect transistor with integrated gate control and radio frequency switch
AssigneeSensor Electronic Technology, Inc.
InventorsGrigory Simin, Alexei Koudymov, Michael Shur, Remigijus Gaska
Life of this patent
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Abstract
A field effect transistor (FET) including a monolithically integrated gate control circuit element can be included in, for example, a radio frequency switch circuit. For example, the FET can be included as a series and/or shunt FET of a radio frequency coplanar waveguide circuit. The widths of the series and shunt FETs of a switch circuit can be selected to provide a target isolation and/or a target insertion loss for a target operating frequency.
Claims20
A switch circuit comprising:
- a field effect transistor (FET);
- a gate control circuit for operating the FET, wherein the gate control circuit includes a gate control circuit element monolithically integrated with the FET;
- and
- a low-pass filter formed using the gate control circuit element.
1 more element
A method comprising:
- designing a switch circuit, the switch circuit including a series field effect transistor (FET) and a shunt FET, the designing including:
- selecting a FET comprising a monolithically integrated gate control element for implementing at least one of:
- the series FET or the shunt FET, wherein a low-pass filter is formed using the monolithically integrated gate control element;
- and
- electrically connecting an input signal to an input of the monolithically integrated gate control element, wherein the input signal comprises one of:
- an output signal of a second gate control element of a gate control circuit or an input signal for the gate control circuit.
3 more elements
A device comprising:
- a field effect transistor (FET) comprising a gate;
- and
- a circuit monolithically integrated with the gate of the FET, wherein a low-pass filter is formed using the monolithically integrated circuit.
Dependencies are inferred from the claim text.