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US 2010/0301896 A1Published application
Phase-change memory security device
AssigneeInfineon Technologies AG
InventorsThomas Nirschl, Berndt Gammel, Stefan Rueping, Ronald Kakoschke, Gerd Dirscherl, Philip Schlazer
Life of this patent
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Abstract
A semiconductor chip having a subcircuit formed in a substrate; and a phase-change memory cell located on the subcircuit, and configured to directly detect an attack on the subcircuit, or to form a shield to prevent physical access to the subcircuit.
Claims25
A semiconductor chip comprising:
- a subcircuit;
- and
- a phase-change memory cell located on the subcircuit, and configured to directly detect an attack on the subcircuit.
A semiconductor chip comprising:
- a first phase-change memory cell;
- and
- a second phase-change memory cell at least partially overlying or underlying the first phase-change memory cell, and configured to directly detect an attack on the first phase-change memory cell.
A method of protecting a subcircuit of a semiconductor chip comprising:
- detecting an attack on the subcircuit directly by a phase-change memory cell formed on the subcircuit.
A method of protecting a first phase-change memory cell of a semiconductor chip comprising:
- detecting an attack on the first phase-change memory cell directly by a second phase-change memory cell at least partially overlying or underlying the first phase-change memory cell.
Dependencies are inferred from the claim text.