Structure and Method for Power Field Effect Transistor

An apparatus comprising:

• a metal plate having a flat first surface and a parallel second surface, the first surface ending in four sawed plate sides, the plate separated into a first section and a second section spaced apart by a gap, each section having on the second surface at least one mesa of the same metal, the mesas raised from the second plate surface;
• an insulating member adhering to the first plate surface bridging the gap and holding the first and second sections together;
• and
• a semiconductor chip having a pair of terminals on the first chip surface and a single terminal on the second chip surface, one terminal of the pair attached onto the first plate section and the other terminal of the pair attached onto the second plate section.

An apparatus comprising:

• a metal plate having a flat first surface and a parallel second surface, the first surface ending in four sawed plate sides, the plate separated into a first section and a second section spaced apart by a gap, the plate having on the second surface at least one mesa of the same metal in each section, the mesa raised from the second plate surface;
• an insulating member adhering to the first plate surface bridging the gap and holding the first and second sections together;
• a vertical stack of a two semiconductor chips, each chip having a pair of terminals on one chip surface and a single terminal on the opposite chip surface, the single terminals of both chips attached to each other;
• and
• a pair of terminals attached to the plate so that one terminal of the pair contacts the first plate section and the second terminal of the pair contacts the second plate section, forming a packaged chip stack.

A method for fabricating an apparatus comprising the steps of:

• providing a metal plate having a single flat first surface and a parallel second surface, the flat first surface ending in four sawed plate sides, the plate having on the second surface at least one mesa of the same metal, the mesa raised from the second surface;
• providing a semiconductor chip having a pair of terminals on the first chip surface and a single terminal on the second chip surface;
• and
• attaching the single terminal onto the second plate surface.

A method for fabricating an apparatus comprising the steps of:

• providing a metal plate having a flat first surface and a parallel second surface, the first surface ending in four sawed plate sides, the plate separated into a first section and a second section spaced apart by a gap, the plate having on the second surface in each section at least one mesa of the same metal, the mesas raised from the second surface, the plate further having an insulating member adhering to the first surface, the member bridging the gap and holding the first and second sections together;
• providing a semiconductor chip having a pair of terminals on the first chip surface and a single terminal on the second chip surface;
• and
• attaching one terminal of the pair onto the first plate section and the other terminal of the pair onto the second plate section.

A method for fabricating a metal plate comprising the steps of:

• providing a sheet of a first metal, the sheet having a flat first surface and a parallel third surface;
• masking on the third sheet surface at least one portion, leaving the remaining portion of the third sheet surface area unmasked;
• creating a second sheet surface parallel to the first sheet surface by etching the unmasked portion of the third sheet surface, concurrently transforming the masked spots into mesas raised from the second sheet surface;
• and
• singulating the sheet into discrete metal plates, each plate including an assembly site and at least one mesa.