Semiconductor device and method for manufacturing same
AssigneeNEC Electronics Corporation
InventorShinichi CHIKAKI
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Abstract
Provided is the method for manufacturing the semiconductor device including: providing a film (organic silicon polymer film) containing a silane compound and a porogen on a substrate; providing a hole (interconnect trench) in the organic silicon polymer film using a selective etching process and providing a metallic film (barrier film and copper interconnect) in the inside of the interconnect trench; and conducting a radiation with ultraviolet over the organic silicon polymer film within an atmosphere of a reducing gas while the film is heated at a temperature of not lower than a boiling point or a decomposition temperature of the porogen to obtain a microporous film.
Claims11
A method for manufacturing a semiconductor device, comprising:
- providing a film containing a silane compound and a porogen over a substrate;
- forming a hole in said film using a selective etching process and forming a metallic film in the inside of said hole:
- and
- conducting a radiation with ultraviolet over said film within an atmosphere of a reducing gas while the film is heated at a temperature to obtain a microporous film, said temperature being not lower than a boiling point or a decomposition temperature of said porogen.
A semiconductor device, comprising:
- a substrate;
- a microporous film provided over said substrate;
- a hole provided in said microporous film;
- and
- a metallic film provided in the inside of said hole,
- wherein a stress in said microporous film in vicinity of said metallic film is a compressive stress.
Dependencies are inferred from the claim text.