Profiled contact for semiconductor device
AssigneeSensor Electronic Technology, Inc.
InventorsGrigory Simin, Michael Shur, Remigijus Gaska
Life of this patent
Estimating the term…
Abstract
A profiled contact for a device, such as a high power semiconductor device is provided. The contact is profiled in both a direction substantially parallel to a surface of a semiconductor structure of the device and a direction substantially perpendicular to the surface of the semiconductor structure. The profiling can limit the peak electric field between two electrodes to approximately the same as the average electrical field between the electrodes, as well as limit the electric field perpendicular to the semiconductor structure both within and outside the semiconductor structure.
Claims20
A device comprising:
- a semiconductor structure;
- and
- a first contact located on the semiconductor structure, wherein the first contact comprises at least two contact corners having a parallel profiled shape in a direction substantially parallel with respect to a surface of the semiconductor structure and at least one edge between the at least two contact corners comprising a perpendicular profiled shape in a direction substantially perpendicular to the surface of the semiconductor structure.
A method comprising:
- designing a semiconductor device, the designing including configuring a shape of a first contact to a semiconductor structure of the device, wherein the configuring includes:
- defining a parallel profiled shape for at least two contact corners of the first contact in a direction substantially parallel with respect to a surface of the semiconductor structure;
- and
- defining a perpendicular profiled shape for at least one edge of the first contact between the at least two contact corners in a direction substantially perpendicular to the surface of the semiconductor structure.
A system comprising:
- a computer system including at least one computing device, wherein the computer system is configured to implement a method comprising:
- designing a semiconductor device, the designing including configuring a shape of a first contact to a semiconductor structure of the device, wherein the configuring includes:
- defining a parallel profiled shape for at least two contact corners of the first contact in a direction substantially parallel with respect to a surface of the semiconductor structure;
- and
- defining a perpendicular profiled shape for at least one edge of the first contact between the at least two contact corners in a direction substantially perpendicular to the surface of the semiconductor structure.
Dependencies are inferred from the claim text.