Microstructure device including a metallization structure with self-aligned air gaps formed based on a sacrificial material
AssigneeGlobalfoundries Inc.
InventorsRobert Seidel, Thomas Werner
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Abstract
In a sophisticated metallization system of a semiconductor device, air gaps may be formed in a self-aligned manner on the basis of a sacrificial material, such as a carbon material, which is deposited after the patterning of a dielectric material for forming therein a via opening. Consequently, superior process conditions during the patterning of the via opening and the sacrificial material in combination with a high degree of flexibility in selecting appropriate materials for the dielectric layer and the sacrificial layer may provide superior uniformity and device characteristics.
Claims27
A method, comprising:
- forming a via opening in a dielectric layer of a metallization layer of a semiconductor device;
- forming a sacrificial material layer above said dielectric layer;
- forming a plurality of trenches in said sacrificial material layer, one of said plurality of trenches connecting to said via opening;
- forming metal regions in said plurality of trenches;
- removing said sacrificial material layer from between at least some of said metal regions;
- and
- depositing a dielectric cap layer so as to form air gaps between said at least some of said metal regions.
A method, comprising:
- forming a sacrificial material above a dielectric material of a metallization system of a microstructure device and within a via opening formed in said dielectric material;
- forming a plurality of metal regions in said sacrificial material, one of said plurality of metal regions being formed in and above said via opening;
- removing said sacrificial material at least from between two adjacent metal regions of said plurality of metal regions by using said dielectric material as an etch stop material;
- and
- forming a dielectric cap layer above said plurality of metal regions so as to form a gap at least between said two adjacent metal regions.
A microstructure device, comprising:
- a plurality of metal regions formed in a metallization layer;
- a via formed in a dielectric material of said metallization layer, one of said plurality of metal regions connecting to said via;
- an air gap located between a pair of neighboring metal regions of said plurality of metal regions;
- a fill material formed on said dielectric material in a device area laterally offset from said pair of neighboring metal regions;
- and
- a dielectric cap material covering said air gap and said fill material.
Dependencies are inferred from the claim text.