Electronic device, conductive composition, metal filling apparatus, and electronic device manufacturing method
AssigneeNapra Co., Ltd.
InventorsShigenobu SEKINE, Yurina SEKINE, Yoshiharu KUWANA, Ryuji KIMURA
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Abstract
An electronic device includes a plurality of stacked substrates. Each of the substrates includes a semiconductor substrate, a columnar conductor, and a ring-shaped insulator. The columnar conductor extends along a thickness direction of the semiconductor substrate. The ring-shaped insulator includes an inorganic insulating layer mainly composed of a glass. The inorganic insulating layer fills a ring-shaped groove that is provided in the semiconductor substrate to surround the columnar conductor.
Claims31
An electronic device comprising a plurality of stacked substrates, wherein
- each of said substrates includes a semiconductor substrate, a columnar conductor, and a ring-shaped insulator,
- said columnar conductor extends along a thickness direction of said semiconductor substrate,
- said ring-shaped insulator includes an inorganic insulating layer mainly composed of a glass, and
- said inorganic insulating layer fills a ring-shaped groove that is provided in said semiconductor substrate to surround said columnar conductor.
A metal filling apparatus for filling a minute space of a wafer with a molten metal, comprising a support, a molten metal supply unit, and a pressurizing means, wherein
- said support includes a processing chamber for processing said wafer, a first member with a mounting surface for mounting of said wafer, and a second member with a metal supply path leading to said processing chamber,
- said processing chamber is defined by combining said first member and said second member,
- said molten metal supply unit is designed to fill said minute space of said wafer, which is mounted on said mounting surface, with said molten metal through said metal supply path, and
- said pressurizing means is designed to apply a pressure to said wafer and said molten metal filled into said minute space.
A conductive composition comprising first metal particles and second metal particles, wherein
- said first metal particles have an average particle size in such a nm range as to exhibit small size effect, enabling melting at a temperature lower than a melting point, and
- melting of said first metal particles causes melting of said second metal particles.
Dependencies are inferred from the claim text.