Joint structure and electronic component
AssigneePanasonic Corporation
InventorsAkio Furusawa, Shigeaki Sakatani, Taichi Nakamura, Takahiro Matsuo
Life of this patent
Estimating the term…
Abstract
A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 μm after the electronic element and the electrode are joined by the solder layer.
Claims11
A joint structure comprising:
- an electronic element included in an electronic component;
- an electrode included in the electronic component;
- and a joint for joining the electronic element and the electrode,
- said joint comprising:
- a solder layer provided between the electronic element and the electrode, the solder layer containing 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium, and 93.8 to 99.78% by weight of bismuth;
- a nickel layer provided at least one of between the solder layer and the electrode and between the solder layer and the electronic element;
- and
- a barrier layer provided between the nickel layer and the solder layer, wherein,
- the barrier layer has an average thickness of from 0.5 to 4.5 μm.
An electronic component comprising:
- an electronic element;
- an electrode;
- and a joint, for joining the electronic element and the electrode,
- said joint comprising:
- a solder layer provided between the electronic element and the electrode, the solder layer containing 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium, and 93.8 to 99.78% by weight of bismuth,
- a nickel layer provided at least one of between the solder layer and the electrode and between the solder layer and the electronic element, and
- a barrier layer provided between the nickel layer and the solder layer, wherein
- the barrier layer has an average thickness of from 0.5 to 4.5 μm.
Dependencies are inferred from the claim text.