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US 2010/0301462 A1Published application
Method and apparatus providing air-gap insulation between adjacent conductors using nanoparticles
AssigneeMicron Technology, Inc.
InventorsNishant Sinha, Gurtej Sandhu, Neil Greeley, John Smythe
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Abstract
A semiconductor device and a method of forming it are disclosed in which at least two adjacent conductors have an air-gap insulator between them which is covered by nanoparticles of insulating material being a size which prevent the nanoparticles from substantially entering into the air-gap.
Claims25
A semiconductor device comprising:
- at least two adjacent co-planar conductors provided on a material with a gap between adjacent co-planar conductors at said location;
- and
- a plurality of insulating material nanoparticles on the conductors arranged to cover but not substantially enter into the gap.
A semiconductor device comprising:
- a first layer of adjacent co-planar conductors provided on a material, said adjacent co-planar conductors having gaps between them;
- a first plurality of insulating material nanoparticles on said first layer of adjacent co-planar conductors which span over said gaps, wherein each said nanoparticle has a minimum equatorial cross-section that is larger than a maximum width of a gap;
- and
- an insulating layer on said first plurality of insulating material nanoparticles.
1 more element
A semiconductor device comprising:
- at least two layers of adjacent co-planar conductors provided on a material, said layers provided perpendicularly to each other;
- a plurality of gaps between said adjacent co-planar conductors;
- and
- a plurality of insulating material nanoparticles on said adjacent co-planar conductors which span over said gaps without substantially entering into said gaps, wherein each said nanoparticle has a minimum equatorial cross-section of about 50 nm to about 100 nm.
1 more element
A method of fabricating a semiconductor device comprising:
- forming at least two adjacent co-planar conductors on a support material, the conductors defining a gap between them;
- and
- depositing a plurality of nanoparticles over the conductors and gaps, the nanoparticles having a size which causes them to bridge across the adjacent co-planar conductors.
A method of fabricating a semiconductor device comprising:
- forming a first layer of adjacent co-planar parallel conductors on a support material with gaps provided between adjacent conductors;
- depositing a first plurality of insulating material nanoparticles on said first layer of adjacent co-planar parallel conductors, wherein the nanoparticles have a minimum equatorial cross-section that is larger than a maximum width of the gaps;
- forming an insulating layer over said first plurality of insulating material nanoparticles;
- forming a second layer of adjacent co-planar parallel conductors on said insulating layer with gaps provided between adjacent conductors;
- and
- depositing a second plurality of insulating material nanoparticles on said second layer of adjacent co-planar parallel conductors, wherein the nanoparticles have a minimum equatorial cross-section that is larger than a maximum width of the gaps.
3 more elements
Dependencies are inferred from the claim text.