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US 2010/0301461 A1Published application
Reliable interconnection
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsHuang Liu, Jack Cheng, Wei Lu, Yihua Wang, Meisheng Zhou
Life of this patent
Estimating the term…
Abstract
Embodiments relate to a method for forming reliable interconnects by the use of a device layer that can serve as a barrier or an etch stop layer, among other applications. The device layer is UV resistant in that its dielectric constant and stress remain stable or relatively stable when subjected to UV curing.
Claims20
A method of forming a device comprising:
- providing a substrate prepared with circuit components;
- forming a doped device layer on the substrate;
- forming an interlevel dielectric layer on the doped device layer;
- and
- exposing the substrate with UV radiation to cure the interlevel dielectric layer, wherein properties of the doped device layer remain stable when exposed to UV radiation.
2 more elements
A method for forming a semiconductor device comprising:
- providing a substrate;
- forming a doped device layer;
- and
- exposing the substrate to UV radiation, wherein properties of the doped dielectric layer are stable when exposed to the UV radiation.
1 more element
A semiconductor device comprising:
- a substrate;
- and
- a doped low k dielectric layer doped with —CH3, wherein properties of the doped low k dielectric layer are relatively stable when exposed to UV radiation.
Dependencies are inferred from the claim text.