Semiconductor device having a filled trench structure and methods for fabricating the same
AssigneeGlobalfoundries Inc.
InventorsZhen ZHANG, Frank KUECHENMEISTER, Jaime BRAVO, Michael SU, Ranjit GANNAMANI, Kevin LIM
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Abstract
Methods are provided for packaging a semiconductor die having a first surface. In accordance with an exemplary embodiment, a method comprises the steps of forming a trench in the first surface of the die, electrically and physically coupling the die to a packaging substrate, forming a sealant layer on the first surface of the die, forming an engagement structure within the trench, and infusing underfill between the sealant layer and the engagement structure and the packaging substrate.
Claims20
A method of fabricating a semiconductor device comprising the steps of:
- providing a semiconductor die having a first surface;
- forming a trench in the first surface of the die;
- electrically and physically coupling the die to a packaging substrate;
- forming a sealant layer on the first surface of the die;
- forming an engagement structure within the trench;
- and
- infusing underfill between the sealant layer and the engagement structure and the packaging substrate.
A method of fabricating a semiconductor device comprising the steps of:
- providing a semiconductor die having a first surface and an active region;
- forming a trench in the first surface outside of the active region;
- forming a first sealant layer on the first surface;
- forming a filled trench structure within the trench;
- electrically and physically coupling the active region of the semiconductor die to a packaging substrate;
- and
- forming a second sealant layer disposed between the filled trench structure and the packaging substrate.
An electronic device comprising:
- a packaging substrate;
- a semiconductor die having a trench formed in a first surface, the first surface electrically and physically coupled to the packaging substrate;
- and
- a sealant layer disposed in the trench and between the packaging substrate and the first surface of the semiconductor die.
Dependencies are inferred from the claim text.