Method for manufacturing a semiconductor device and a semiconductor device

A method for manufacturing a semiconductor device, comprising the steps of:

• (a) providing a semiconductor wafer having a main surface, a plurality of device regions formed over the main surface, a plurality of first electrodes formed in each of the device regions, ascribe region formed between the device regions of the device regions adjacent to each other, and a back surface positioned on the opposite side of the main surface;
• (b) grinding the back surface of the semiconductor wafer;
• (c) disposing a plurality of conductive members to be respectively electrically coupled with the first electrodes on the main surface side, respectively;
• and
• (d) dividing the semiconductor wafer along the scribe region, and obtaining a plurality of semiconductor chips,
• wherein the main surface includes a semiconductor element layer including a plurality of semiconductor elements formed therein, and a plurality of first wirings stacked over the semiconductor element layer via a plurality of first insulation layers, and electrically coupled with the semiconductor elements,
• wherein the first electrodes, a second wiring for electrically coupling the first electrodes and the semiconductor elements, and a second insulation layer formed by covering the first wirings, the second wirings and the first insulation layer such that the first electrodes are exposed are formed over the main surface,
• wherein the step (a) includes the steps of:
• (a1) forming a first insulation film over the second insulation layer such that the first electrodes are exposed;
• and
• (a2) forming a plurality of third wirings to be electrically coupled with the first electrodes, respectively, over the first insulation film,
• wherein the conductive members are each bonded to a portion of each of the third wirings, and
• wherein the first insulation film is formed such that a portion of the insulation layer or the first insulation film formed closer to the back surface side than the first insulation film is exposed.

A semiconductor device, comprising:

• a semiconductor chip having a main surface, a plurality of first electrodes formed over the main surface, and a back surface arranged on the opposite side of the main surface,
• wherein the main surface includes a semiconductor element layer including a plurality of semiconductor elements formed therein, and a plurality of first wirings stacked over the semiconductor element layer via a plurality of first insulation layers, and electrically coupled with the semiconductor elements,
• wherein, the first electrodes, a second wiring for electrically coupling the first electrodes and the semiconductor elements, a second insulation layer formed by covering the first wirings, the second wirings and the first insulation layer such that the first electrodes are exposed, a first insulation film formed over the second insulation layer such that the first electrodes are exposed, a plurality of third wirings electrically coupled with the first electrodes, respectively, over the first insulation film, a second insulation film formed over the third wirings such that a portion of each of the third wirings is exposed, and a plurality of conductive members respectively bonded to the regions of the third wirings exposed through the second insulation film, are formed over the main surface, and
• wherein any of the first insulation film and the second insulation film is formed such that a portion of the insulation layer or the first insulation film formed closer to the back surface side than the first insulation film or the second insulation film is exposed.

A semiconductor device, comprising:

• a semiconductor chip having a main surface, a plurality of first electrodes formed over the main surface, and a back surface arranged on the opposite side of the main surface,
• wherein the main surface includes a semiconductor element layer including a plurality of semiconductor elements formed therein, and a plurality of first wirings stacked over the semiconductor element layer via a plurality of first insulation layers, and electrically coupled with the semiconductor elements,
• wherein the first electrodes, a second wiring for electrically coupling the first electrodes and the semiconductor elements, a second insulation layer formed by covering the first wirings, second wirings and the first insulation layer such that the first electrodes are exposed, a first insulation film formed over the second insulation layer such that the first electrodes are exposed, a plurality of third wirings electrically coupled with the first electrodes, respectively, over the first insulation film, and a plurality of conductive members respectively bonded to the third wirings, are formed over the main surface, and
• wherein the first insulation film is formed such that a portion of the insulation layer or the first insulation film formed closer to the back surface side than the first insulation film is exposed.