Lithography Masks, Systems, and Manufacturing Methods
AssigneeInfineon Technologies AG
InventorUwe Paul Schroeder
Life of this patent
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Abstract
Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position. The lithography mask includes a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position. The second position is different than the first position.
Claims25
A lithography mask, comprising:
- a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position;
- and
- a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position, the second position being different than the first position.
A method of manufacturing a lithography mask, the method comprising:
- designing a layout for at least one material layer of a semiconductor device;
- determining a first pattern for a first portion of the layout;
- determining a second pattern for a second portion of the layout;
- and
- fabricating a lithography mask including the first pattern oriented in a first position and the second pattern oriented in a second position, the second position being different than the first position.
A method of altering at least one material layer of a semiconductor device, the method comprising:
- providing a lithography mask including a first pattern and a second pattern;
- affecting at least one material layer of the semiconductor device using the first pattern of the lithography mask, the first pattern being oriented in a first position;
- rotating the lithography mask to position the second pattern in the first position relative to a pattern formed on the affected at least one material layer of the semiconductor device;
- and
- affecting the at least one material layer of the semiconductor device using the second pattern of the lithography mask.
A method of manufacturing a semiconductor device, the method comprising:
- providing a workpiece;
- providing a lithography mask, the lithography mask including a first pattern and a second pattern, the first pattern being oriented in a first position and the second pattern being oriented in a second position, the second position being different than the first position;
- affecting the workpiece using the first pattern of the lithography mask;
- rotating the lithography mask;
- and
- affecting the workpiece using the second pattern of the lithography mask.
Dependencies are inferred from the claim text.