Lattice matched multi-junction photovoltaic and optoelectronic devices
OwnerYong-Hang Zhang, Shade R. Johnson +3inventors
InventorsYong-Hang Zhang, Shade R. Johnson, Shui-Qing Yu, Ding Ding, Songnan Wu
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Abstract
The present invention provides semiconductor structures comprising a substrate and at least three III-V and/or II-VI multi junction building blocks, each comprising a p-n junction having at least two alloy layers, formed over the substrate, provided at least one multi-junction building block comprises II-VI alloy layers. Further described are methods for preparing semiconductor structures utilizing a sacrificial or etch-stop ternary III-V alloy layer over an III-V substrate.
Claims103
A semiconductor structure comprising a substrate and at least two multi-junction building blocks formed over the substrate, wherein
- the substrate is a III-V substrate or a II-VI substrate;
- and
- each multi junction building block independently comprises a p-n junction having at least two alloy layers, wherein the alloy layers are independently III-V or II-VI alloy layers, wherein one alloy layer is p-doped and the other alloy layer is n-doped,
- provided at least one multi junction building block comprises II-VI alloy layers.
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A method for preparing a semiconductor structure comprising,
- preparing an etch-stop ternary III-V alloy layer over an III-V substrate;
- preparing at least two multi junction building blocks over the etch-stop layer, wherein each multi junction building block independently comprises a p-n junction having at least two alloy layers, wherein the alloy layers are independently III-V or II-VI alloy layers, wherein one alloy layer is p-doped and the other alloy layer is n-doped, provided at least one multi junction building block comprises II-VI alloy layers;
- removing the substrate;
- and
- removing the etch-stop alloy layer.
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A semiconductor structure comprising at least two multi junction building blocks, wherein
- each multi junction building block independently comprises a p-n junction having at least two alloy layers, wherein the alloy layers are independently III-V or II-VI alloy layers, wherein one alloy layer is p-doped and the other alloy layer is n-doped,
- provided at least one multi junction building block comprises II-VI alloy layers.
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(A method for preparing a semiconductor structure comprising
- forming at least two multi junction building blocks over a substrate, wherein
- the substrate is a III-V substrate or a II-VI substrate;
- and
- each multi junction building block independently comprises a p-n junction having at least two alloy layers, wherein the alloy layers are independently III-V or II-VI alloy layers, wherein one alloy layer is p-doped and the other alloy layer is n-doped,
- provided at least one multi junction building block comprises II-VI alloy layers.
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Dependencies are inferred from the claim text.