Methods and apparatus for forming line and pillar structures for three dimensional memory arrays using a double subtractive process and imprint lithography

A memory layer in a three-dimensional memory array, the memory layer comprising:

• a plurality of memory lines and pillars formed by a process using an imprint lithography template having a plurality of depths, wherein at least one depth corresponds to the memory lines and wherein at least one depth corresponds to the pillars;
• and
• a plurality of memory cells formed in the pillars and operatively coupled to the memory lines.

An imprint lithography mask for manufacturing a memory layer in a three dimensional memory, the mask comprising:

• a translucent material formed with features for making an imprint in a transfer material to be used in a double subtractive process, the mask having a plurality of imprint depths,
• wherein at least one imprint depth corresponds to trenches for forming memory lines and wherein at least one depth corresponds to holes for forming pillar-shaped memory cells on the memory lines.

A three dimensional memory array comprising:

• a plurality of horizontal memory layers formed on top of each other and electrically coupled to each other by vertical zias, the zias formed from aligned vias in each memory layer, and the memory layers including a plurality of memory lines and the memory cell pillars, both formed concurrently using an imprint lithography mask.