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US 2010/0301448 A1Published application
Semiconductor device and method for forming the same
AssigneeElectronics and Telecommunications Research Institute
InventorsO-Kyun KWON, Dong-Woo Suh, Junghyung Pyo, Gyung-Ock Kim
Life of this patent
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Abstract
Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.
Claims7
1-9. (canceled)
A semiconductor device comprising:
- a substrate;
- a silicon pattern on the substrate, the silicon pattern having an bottom surface and sidewalls opposite to the substrate;
- and
- an insulating pattern interposed between the substrate and the silicon pattern and contacted with the bottom surface and the sidewalls of the silicon pattern.
1 more element
Dependencies are inferred from the claim text.