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US 2010/0301444 A1Published application
Semiconductor imaging device with which semiconductor elements of pixel area and other areas has same characteristics
AssigneeKabushiki Kaisha Toshiba
InventorHidetoshi KOIKE
Life of this patent
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Abstract
Photoelectric conversion elements are arranged in a pixel area. A circuit area is arranged around the pixel area. An interconnect including copper is arranged in the pixel area and circuit area. A cap layer is arranged on the interconnect. Wherein the cap layer except a part on the interconnect is removed from the pixel area and circuit area.
Claims14
A semiconductor imaging device comprising:
- a pixel area in which photoelectric conversion elements are arranged;
- a circuit area arranged around the pixel area;
- an interconnect including copper arranged in the pixel area and circuit area;
- and
- a cap layer arranged on the interconnect,
- wherein the cap layer except a part on the interconnect is removed from the pixel area and circuit area.
3 more elements
A semiconductor device manufacturing method comprising:
- forming photoelectric conversion elements in a pixel area and a circuit area of a semiconductor substrate, the circuit area arranged around the pixel area;
- forming a first insulation film on the pixel area and circuit area;
- forming an interconnect including copper on the first insulation film corresponding to the pixel area and circuit area;
- and
- forming a cap layer on the interconnect, the cap layer except a part on the interconnect removed from the pixel area and circuit area.
2 more elements
Dependencies are inferred from the claim text.