Imaging array with dual height semiconductor and method of making same

Abstract

A method of fabricating an imaging array includes providing a single crystal silicon substrate and bonding the single crystal silicon substrate to an insulating substrate. One or more portions of an exposed surface of the single-crystal silicon substrate are removed to form a pattern of first areas having a first height measured from the insulating substrate and second areas having a second height measured from the insulating substrate. Photosensitive elements are formed on the first areas and readout elements are formed on the second areas. The single-crystal silicon substrate is treated by hydrogen implantation to form an internal separation boundary and a portion of the single-crystal silicon substrate is removed at the internal separation boundary to form the exposed surface.

Dependencies are inferred from the claim text.