Solid-state imaging device and method of manufacturing solid-state imaging device
AssigneeSony Corporation
InventorsYuichi Yamamoto, Hayato Iwamoto
Life of this patent
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Abstract
A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.
Claims12
A solid-state imaging device comprising:
- a structure including at least a silicon layer, a light-receiving portion for effecting photoelectric-conversion formed in said silicon layer, an interconnection layer formed on a surface side of said silicon layer, and a pattern formed on an opposite side to said surface side of said silicon layer;
- and an insulating layer configured as an alignment mark and buried through said silicon layer.
A method of manufacturing a solid-state imaging device including a structure comprising
- at least a silicon layer including a light-receiving sensor portion for effecting photoelectric-conversion formed in said silicon layer, an interconnection layer formed on the surface side of said silicon layer, and a pattern formed on a side opposite to said surface side of said silicon layer, comprising:
- forming a hole through said silicon layer;
- burying a layer in said hole;
- forming a light-receiving sensor portion in said silicon layer;
- and
- forming said pattern on the back side of said silicon layer by using said hole as an alignment mark.
Dependencies are inferred from the claim text.