Semiconductor device and method for making semiconductor device

A method for making a semiconductor device, comprising:

• a step of covering a functional element with an interlayer insulating film, the functional element including an upper electrode composed of an electrically conductive oxide and being configured to store information;
• a step of forming a contact hole in the interlayer insulating film, the contact hole including a side wall surface and a bottom and exposing an upper surface of the upper electrode at the bottom;
• a step of covering the bottom and the side wall surface of the contact hole with an electrically conductive barrier film;
• an initialization step of supplying a silane gas and a first carrier gas to expose the electrically conductive barrier film covering the bottom and the side wall surface of the contact hole to the silane gas;
• an initial tungsten deposition step of supplying a silane gas, a second carrier gas, and a tungsten source gas after the initialization step so as to deposit an initial tungsten film on the bottom and the side wall surface of the contact hole;
• and
• a tungsten filling step of supplying a tungsten source gas and a hydrogen gas after the initial tungsten deposition step to deposit another tungsten film on the initial tungsten film and to at least partly fill the contact hole with the tungsten film,
• wherein the first carrier gas and the second carrier gas each contain an inert gas, and the first carrier gas and the second carrier gas are either free of hydrogen gas or contain a hydrogen gas at a flow rate twice a silane gas flow rate or less.