MEMS Devices and Methods of Manufacture Thereof

A micro-electromechanical system (MEMS) device, comprising:

• a oxide layer disposed over a workpiece;
• a first semiconductive material disposed over the oxide layer;
• a first trench disposed in the first semiconductive material and the oxide layer, the trench comprising a first sidewall and a second sidewall opposite the first sidewall;
• an insulating material layer disposed over the first semiconductive material, a first portion of the insulating material layer disposed over at least a portion of the first sidewall of the first trench, wherein the insulating material layer comprises an oxide or a nitride material;
• a conductive material disposed within and over the first trench, the conductive material contacting the first portion of the insulating material layer;
• and
• a first gap disposed in an upper portion of the first trench, the first gap being disposed between the conductive material and the second sidewall of the first trench.

A method of manufacturing a micro-electromechanical system (MEMS) device, the method comprising:

• providing a workpiece, the workpiece comprising a substrate, a buried oxide layer disposed over the substrate, and a first semiconductive material disposed over the buried oxide layer, the first semiconductive material having a top surface;
• forming at least one trench in the first semiconductive material, exposing a top surface of the buried oxide layer at the bottom of the at least one trench, the at least one trench comprising a first sidewall and a second sidewall opposite the first sidewall;
• forming an insulating material layer over the first and second sidewalls of the at least one trench, and the top surface of the buried oxide layer;
• disposing a second semiconductive material or a conductive material over the insulating material layer;
• removing portions of the second semiconductive material or the conductive material thereby leaving the second semiconductive material or the conductive material within the at least one trench;
• and
• removing the insulating material layer from over the second sidewall of the at least one trench.