Semiconductor device and method of manufacturing the same
AssigneeRenesas Technology Corp.
InventorTOSHIHIDE NABATAME
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Abstract
In a p-channel-type field-effect transistor having a metal gate electrode, a technique capable of stably obtaining a desired threshold voltage is provided. On a gate insulating film composed of a HfSiON film and formed on a semiconductor substrate, there is formed a metal gate electrode partially having a conductive film with a Me1-xAlxOy (0.2≦x≦0.75, 0.2≦y≦1.5) composition having a Me-O—Al—O-Me bond or a metal gate electrode partially having a conductive film with a Me1-xAlxN1-zOz (0.2≦x≦0.75, 0.1≦z≦0.9) composition having a Me-O—Al—N-Me bond.
Claims20
A semiconductor device having a p-channel-type field-effect transistor in which a metal gate electrode and a gate insulating film composed of a high dielectric film having a higher dielectric constant than that of SiO2 are provided on a main surface of a semiconductor substrate, wherein
- the metal gate electrode is composed of a conductive film with a Me1-xAlxOy composition having a bond composed of a metal element, Al element, and O element,
- a ratio x of the Al element is 0.2 or larger and 0.75 or smaller, and
- a ratio y of the O element is 0.2 or larger and 1.5 or smaller.
A semiconductor device having a p-channel-type field-effect transistor in which a metal gate electrode and a gate insulating film composed of a high dielectric film having a higher dielectric constant than that of SiO2 are provided on a main surface of a semiconductor substrate, wherein
- the metal gate electrode is composed of a conductive film with a Me1-xAlxN1-zOz composition having a bond composed of a metal element, Al element, N element, and O element,
- a ratio x of the Al element is 0.2 or larger and 0.75 or smaller, and
- a ratio z of the O element is 0.1 or larger and 0.9 or smaller.
A method of manufacturing a semiconductor device having a p-channel-type field-effect transistor on a main surface of a semiconductor substrate comprising the steps of:
- (a) forming a gate insulating film on the main surface of the semiconductor substrate, the gate insulating film being composed of a high dielectric film having a higher dielectric constant than that of SiO2;
- (b) sequentially forming a first metal film and an Al film on the gate insulating film;
- (c) applying a thermal treatment to the semiconductor substrate at a temperature of 400° C. or lower for oxidizing the Al film to form an AlOy film;
- (d) forming a second metal film on the AlOy film;
- and
- (e) applying a thermal treatment to the semiconductor substrate at a temperature of 600° C. or higher to form a metal gate electrode on the gate insulating film, the metal gate electrode being composed of a conductive film with a Me1-xAlxOy composition.
A method of manufacturing a semiconductor device having a p-channel-type field-effect transistor on a main surface of a semiconductor substrate comprising the steps of:
- (a) forming a gate insulating film on the main surface of the semiconductor substrate, the gate insulating film being composed of a high dielectric film having a higher dielectric constant than that of SiO2;
- (b) sequentially forming a first metal nitride film and an AlNz film on the gate insulating film;
- (c) applying a thermal treatment to the semiconductor substrate at a temperature of 400° C. or lower for oxidizing the AlN, film to form an AlN1-zOz film;
- (d) forming a second metal nitride film on the AlN1-zOz film;
- and
- (e) applying a thermal treatment to the semiconductor substrate at a temperature of 600° C. or higher to form a metal gate electrode on the gate insulating film, the metal gate electrode being composed of a conductive film with a Me1-xAlxN1-zOz composition.
Dependencies are inferred from the claim text.