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US 2010/0301425 A1Published application
Semiconductor device having a gate contact structure capable of reducing interfacial resistance
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Seok Kang, Yoo-Cheol Shin, Jung-Dal Choi, Jong-Sun Sel, Ju-Hyung Kim, Sang-Hun Jeon
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Abstract
A semiconductor device has a gate contact structure, including a semiconductor substrate, a polycrystalline silicon layer used as a gate electrode of a transistor, a middle conductive layer, a top metal layer having an opening exposing the polycrystalline silicon layer, and a contact plug directly contacting the polycrystalline silicon layer through the opening.
Claims17
A semiconductor device, comprising:
- a polysilicon layer on a substrate, the polysilicon layer being a gate electrode of a transistor;
- a middle conductive layer and a top metal layer on the polysilicon layer;
- an opening through the middle conductive layer and the top metal layer exposing the polysilicon layer;
- and
- a contact plug directly connected with the polysilicon layer through the opening.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate including a first region and a second region;
- a first gate structure on the first region, the first gate structure including a polysilicon layer and a first top metal layer;
- a second gate structure on the second region, the second gate structure including a bottom conductive layer and a second top metal layer;
- a first contact plug connected directly with the polysilicon layer of the first gate structure;
- and
- a second contact plug connected directly with the second top metal layer of the second gate structure.
3 more elements
17-26. (canceled)
Dependencies are inferred from the claim text.