Back to results
US 2010/0301423 A1Published application
Semiconductor devices with improved local matching and end resistance of rx based resistors
AssigneeGlobalfoundries Inc.
InventorsKaveri Mathur, James F. Buller, Andreas Kurz
Life of this patent
Estimating the term…
Abstract
Semiconductor devices are formed with reduced variability between close proximity resistors, improved end resistances, and reduced random dopant mismatch. Embodiments include ion implanting a dopant, such as B, at a relatively high dosage, e.g. about 4 to about 6 keV, and at a relatively low implant energy, e.g., about 1.5 to about 2E15/cm2.
Claims20
A method comprising:
- forming active regions on a substrate;
- defining resistive structures on portions of the active regions, each resistive structure comprising a first edge and a second edge opposite the first edge;
- and
- introducing a dopant into the resistive structures at an energy less than 8 keV and at a dosage greater than or equal to 1.5E15/cm2.
1 more element
A semiconductor device comprising:
- a silicon or SOI substrate;
- a metal gate electrode, having first and second side surfaces, formed on the substrate;
- active regions formed in the substrate adjacent the first and second side surfaces of the metal gate electrode, portions of the active regions being resistive structures each with a first edge and a second edge opposite the first edge, the resistive structures having been ion implanted with a dopant at a dosage greater than 1.5E15/cm2 and at an energy of about 4 to 6 keV.
A method of fabricating a semiconductor device, the method comprising:
- forming a high-K gate dielectric layer on a silicon or SOI substrate;
- forming a metal gate electrode, having first and second side surfaces, on the high-K gate dielectric layer;
- forming an amorphous silicon layer on the metal gate electrode with a thickness less than 800 Å;
- forming active regions in the substrate adjacent the first and second side surfaces of the metal gate electrode;
- defining resistive structures on portions of the active regions, each resistive structure comprising a first edge and a second edge opposite the first edge;
- introducing a B dopant into the resistive structures at an energy of about 4 to 6 keV and at a dosage of about 1.5 to 2E15/cm2;
- forming a silicide block over a center portion of each resistive structure;
- forming a silicide on the remainder of the resistive structures;
- forming a dielectric layer on the resistive structures;
- and
- forming metal contacts through the dielectric layer near the first and second edges of resistive structures.
8 more elements
Dependencies are inferred from the claim text.