High-k heterostructure
AssigneesSTMicroelectronics S.r.l., Centre National De La Recherche Scientifique, Ecole Centrale De Lyon
InventorsClément Merckling, Mario El-Kazzi, Guillaume Saint-Girons, Guy Hollinger
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Abstract
A method for preparing a multilayer substrate includes the step of deposing an epitaxial γ-Al2O3 Miller index (001) layer on a Si Miller index (001) substrate.
Claims27
A method for preparing a multilayer substrate, comprising the step of deposing an epitaxial γ-Al2O3 Miller index (001) layer on a Si Miller index (001) substrate.
A Complementary Metal-Oxide-Semiconductor comprising a source, a gate, a drain, a well, and a dielectric layer between the well and the gate, wherein said well comprises Si Miller index (001) and the dielectric layer comprises a layer of 10 or less atomic monolayers of γ-Al2O3 Miller index (001) at least partly covered by a dielectric oxide layer.
19-20. (canceled)
A multilayer substrate comprising a γ-Al2O3 Miller index (001) layer on a Si Miller index (001) layer.
Dependencies are inferred from the claim text.