Device including high-k metal gate finfet and resistive structure and method of forming thereof

A device comprising:

• a substrate comprising a first region and a second region, wherein a dielectric layer is present on the substrate;
• a semiconductor device present on the dielectric layer in the first region of the substrate, the semiconductor device comprising a semiconductor body and a gate structure, the gate structure including a gate dielectric material present on the semiconducting body and a gate conductor material present on the gate dielectric material, wherein the gate dielectric material extends into the second region of the substrate;
• and
• a semiconductor containing fuse comprised of a layered structure including a conductive material atop a semiconductor material, in which the layered structure includes an anode, a cathode, and a fuselink connecting the anode and the cathode, in which the gate dielectric material of the semiconductor device is present between and in direct contact with the semiconductor layer of the semiconductor containing fuse and the dielectric layer in the second region of the substrate.

A device comprising:

• a substrate comprising a first region and a second region, wherein a dielectric layer is present on the substrate;
• a semiconductor device present on the dielectric layer in the first region of the substrate, the semiconductor device comprising a semiconductor body and a gate structure, the gate structure including a gate dielectric material present on the semiconducting body and a gate conductor material present on the gate dielectric material;
• and
• a resistive structure comprised of a semiconductor material having a first terminal and a second terminal on an upper surface of the semiconductor material, wherein a lower surface of the semiconductor material of the resistive structure is in direct contact with the dielectric layer in the second region of the substrate.

A device comprising:

• a substrate comprising a first region and a second region, wherein a dielectric layer is present on the substrate;
• a semiconductor device present on the dielectric layer in the first region of the substrate, the semiconductor device comprising a semiconductor body and a gate structure, the gate structure including a gate dielectric material present on the semiconducting body and a gate conductor material present on the gate dielectric material, wherein the gate dielectric material of the semiconductor device extends into the second region of the substrate;
• and
• a resistive structure comprised of a semiconductor material having a first terminal and a second terminal on an upper surface of the semiconductor material, wherein a lower surface of
• the semiconductor material is in direct contact with the gate dielectric material of the semiconductor device that is present between and in direct contact with the semiconductor layer of the resistive structure and the dielectric layer in the second region of the substrate.

A method of forming a device comprising:

• providing a substrate having a first region and second region, wherein the substrate comprises a dielectric surface;
• forming a semiconductor body on the dielectric surface overlying the first region of the substrate;
• forming a gate stack on the semiconductor body and overlying the dielectric surface in the first region and the second region of the substrate, wherein the gate stack includes a gate dielectric material in contact with at least the semiconductor body, and a gate conductor material on the gate dielectric material;
• removing at least the gate conductor material from the gate stack in the second region of the substrate;
• forming a semiconductor containing contact in electrical communication with the gate conductor material and a semiconductor component of a resistive structure overlying the dielectric surface of the second region of the substrate, wherein the semiconductor containing contact is separated from the semiconductor component of the resistive structure;
• forming source and drain regions in the semiconductor body;
• and
• forming a conductive structure to the semiconductor component of the resistive structure.