Strain transformation in biaxially strained soi substrates for performance enhancement of p-channel and n-channel transistors

A method, comprising:

• forming a first active region and a second active region in a strained silicon-containing semiconductor layer formed above a substrate of a semiconductor device, said first active region having a first aspect ratio of height and length so as to obtain a strain component of opposite type relative to an initial type of strain of said silicon-containing semiconductor layer at least in a central surface region of said first active region, said second active region having a second aspect ratio so as to substantially preserve said initial type of strain at least in a central surface region of said second active region;
• forming a first transistor in and above said first active region with a channel region comprising at least a portion of said central surface region of said first active region;
• and
• forming one or more transistors in and above said second active region with a channel region comprising at least a portion of said central surface region of said second active region.

A semiconductor device, comprising:

• a first trench isolation structure formed in a silicon-containing semiconductor layer, said first trench isolation structure laterally delineating a first active region having a first height to length aspect ratio, said first active region comprising a first central surface area having a strain of a first type, said first active region further comprising a first central body region having a strain of a second type that is different from said first type;
• a second trench isolation structure formed in said silicon-containing semiconductor layer, said second trench isolation structure laterally delineating a second active region having a second height to length aspect ratio that is less than said first height to length aspect ratio, said second active region comprising a second central surface area having a strain of said second type, said second active region further comprising a second central body region having a strain of said second type;
• a first transistor formed in and above said first active region, a portion of a channel region of said first transistor formed in said first central surface area;
• and
• a second transistor formed in and above said second active region, a portion of a channel of said second transistor formed in said second central surface area.