US 2010/0301415 A1 · METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE

Abstract

It is an object to form single-crystalline semiconductor layers with high mobility over approximately the entire surface of a glass substrate even when the glass substrate is increased in size. A first single-crystalline semiconductor substrate is bonded to a substrate having an insulating surface, the first single-crystalline semiconductor substrate is separated such that a first single-crystalline semiconductor layer is left remaining over the substrate having an insulating surface, a second single-crystalline semiconductor substrate is bonded to the substrate having an insulating surface so as to overlap with at least part of the first single-crystalline semiconductor layer provided over the substrate having an insulating surface, and the second single-crystalline semiconductor substrate is separated such that a second single-crystalline semiconductor layer is left remaining over the substrate having an insulating surface.

Claims24

Dependent claims

A semiconductor device comprising:

a base substrate having an insulating surface;
a first bonding layer over a first region of the base substrate;
a first silicon oxynitride layer over the first bonding layer;
a first silicon nitride oxide layer over the first silicon oxynitride layer;
a first single-crystalline semiconductor layer over the first silicon nitride oxide layer;
a second bonding layer over a second region of the base substrate adjacent to the first region of the base substrate;
a second silicon oxynitride layer over the second bonding layer;
a second silicon nitride oxide layer over the second silicon oxynitride layer;
a second single-crystalline semiconductor layer over the second silicon nitride oxide layer,
wherein a side surface of the first single-crystalline semiconductor layer and a side surface of the second single-crystalline semiconductor layer are in contact with each other.

7 more elements

A semiconductor device comprising:

a base substrate having an insulating surface;
a first bonding layer over a first region of the base substrate;
a first silicon oxynitride layer over the first bonding layer;
a first silicon nitride oxide layer over the first silicon oxynitride layer;
a first single-crystalline semiconductor layer over the first silicon nitride oxide layer;
a first source region and a first drain region formed in the first single-crystalline semiconductor layer;
at least one LDD region adjacent to one of the first source region and the first drain region in the first single-crystalline semiconductor layer;
a first gate insulating film formed over the first single-crystalline semiconductor layer;
a first gate formed over the first gate insulating film;
a second bonding layer over a second region of the base substrate adjacent to the first region of the base substrate;
a second silicon oxynitride layer over the second bonding layer;
a second silicon nitride oxide layer over the second silicon oxynitride layer;
a second single-crystalline semiconductor layer over the second silicon nitride oxide layer;
a second source region and a second drain region formed in the second single-crystalline semiconductor layer;
at least one LDD region adjacent to one of the second source region and the second drain region in the second single-crystalline semiconductor layer;
a second gate insulating film formed over the second single-crystalline semiconductor layer;
a second gate formed over the second gate insulating film,
wherein a side surface of the first bonding layer and a side surface of the second bonding layer are in contact with each other.

15 more elements

A semiconductor device comprising:

a base substrate having an insulating surface;
a first bonding layer over a first region of the base substrate;
a first silicon oxynitride layer over the first bonding layer;
a first silicon nitride oxide layer over the first silicon oxynitride layer;
a first single-crystalline semiconductor layer over the first silicon nitride oxide layer;
a first source region and a first drain region formed in the first single-crystalline semiconductor layer;
at least one LDD region adjacent to one of the first source region and the first drain region in the first single-crystalline semiconductor layer;
a first gate insulating film formed over the first single-crystalline semiconductor layer;
a first gate formed over the first gate insulating film;
a second bonding layer over a second region of the base substrate adjacent to the first region of the base substrate;
a second silicon oxynitride layer over the second bonding layer;
a second silicon nitride oxide layer over the second silicon oxynitride layer;
a second single-crystalline semiconductor layer over the second silicon nitride oxide layer;
a second source region and a second drain region formed in the second single-crystalline semiconductor layer;
at least one LDD region adjacent to one of the second source region and the second drain region in the second single-crystalline semiconductor layer;
a second gate insulating film formed over the second single-crystalline semiconductor layer;
a second main gate formed over the second gate insulating film,
wherein a side surface of the first silicon oxynitride layer and a side surface of the second silicon oxynitride layer are in contact with each other.

15 more elements

A semiconductor device comprising:

a base substrate having an insulating surface;
a first bonding layer over a first region of the base substrate;
a first silicon oxynitride layer over the first bonding layer;
a first silicon nitride oxide layer over the first silicon oxynitride layer;
a first single-crystalline semiconductor layer over the first silicon nitride oxide layer;
a first source region and a first drain region formed in the first single-crystalline semiconductor layer;
at least one LDD region adjacent to one of the first source region and the first drain region in the first single-crystalline semiconductor layer;
a first gate insulating film formed over the first single-crystalline semiconductor layer;
a first main gate formed over the first gate insulating film;
a second bonding layer over a second region of the base substrate adjacent to the first region of the base substrate;
a second silicon oxynitride layer over the second bonding layer;
a second silicon nitride oxide layer over the second silicon oxynitride layer;
a second single-crystalline semiconductor layer over the second silicon nitride oxide layer;
a second source region and a second drain region formed in the second single-crystalline semiconductor layer;
at least one LDD region adjacent to one of the second source region and the second drain region in the second single-crystalline semiconductor layer;
a second gate insulating film formed over the second single-crystalline semiconductor layer;
a second gate formed over the second gate insulating film,
wherein a side surface of the first silicon nitride oxide layer and a side surface of the second silicon nitride oxide layer are in contact with each other.

15 more elements

Dependencies are inferred from the claim text.

Method for manufacturing semiconductor substrate, and semiconductor device

Life of this patent

Method for manufacturing semiconductor substrate, and semiconductor device

Life of this patent

Abstract

Claims24