US 2010/0301413 A1 · Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devices

Abstract

Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, a method of fabricating an LDMOS transistor with source, drain, and gate regions on a substrate, can include: forming p-type and n-type buried layer (PBL, NBL) regions; growing an epitaxial (N-EPI) layer on the NBL/PBL regions; forming a p-doped deep p-well (DPW) region on the PBL region; forming a well region in the N-EPI layer; forming a doped body region; after the doped body region formation, forming an active area and a field oxide (FOX) region, and forming a drain oxide between the source and drain regions of the LDMOS transistor; after the doped body region formation, forming a gate oxide adjacent to the source and drain regions, and forming a gate on the gate oxide and a portion of the drain oxide; and forming a doped drain region, and first and second doped source regions.

Claims20

Dependent claims

A method of fabricating a lateral double-diffused metal oxide semiconductor (LDMOS) transistor having a source region, a drain region, and a gate region on a substrate, the method comprising:

a) implanting p-type dopants into a surface of said substrate to form a p-type buried layer (PBL) region, and implanting n-type dopants into said surface of said substrate to form an n-type buried layer (NBL) region;
b) growing an n-type epitaxial (N-EPI) layer on said NBL and PBL regions;
c) implanting p-type dopants into said surface of said substrate to form a p-doped deep p-well (DPW) region on said PBL region;
d) forming a well region in said N-EPI layer;
e) implanting dopants into said source region to form a doped body region;
f) after said doped body region formation, forming an active area and a field oxide (FOX) region for isolation of said LDMOS transistor, and forming a drain oxide between said source region and said drain region of said LDMOS transistor;
g) after said doped body region formation, forming a gate oxide adjacent to said source and drain regions, and forming a gate by covering said gate oxide and a portion of said drain oxide with a conductive material;
and
h) implanting dopants into said drain and source regions to form a doped drain region, and first and second doped source regions.

6 more elements

Dependencies are inferred from the claim text.

Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devices

Life of this patent

Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devices

Life of this patent

Abstract

Claims20