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US 2010/0301410 A1Published application
Semiconductor device and manufacturing method therefor
AssigneeInfineon Technologies Austria AG
InventorFranz Hirler
Life of this patent
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Abstract
A semiconductor device having a semiconductor body, a source metallization arranged on a first surface of the semiconductor body and a trench including a first trench portion and a second trench portion and extending from the first surface into the semiconductor body is provided. The semiconductor body further includes a pn-junction formed between a first semiconductor region and a second semiconductor region. The first trench portion includes an insulated gate electrode which is connected to the source metallization, and the second trench portion includes a conductive plug which is connected to the source metallization and to the second semiconductor region.
Claims25
A semiconductor device comprising:
- a semiconductor body comprising a first surface, a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region and the second semiconductor region forming a pn-junction;
- a source metallization arranged on the first surface;
- and
- a trench extending from the first surface into the semiconductor body and comprising, in a horizontal plane substantially parallel to the first surface, a first trench portion and a second trench portion;
- and
- the first trench portion comprising a gate electrode connected to the source metallization and an insulating layer that insulates the gate electrode from the second semiconductor region;
- the second trench portion comprising a conductive plug which is connected to the source metallization and to the second semiconductor region.
4 more elements
A semiconductor device comprising:
- a source metallization;
- a field-effect structure comprising a source region of a first conductivity type connected to the source metallization, a body region of a second conductivity type adjacent to the source region, a drift region of the first conductivity type adjacent to the body region and a first insulated gate electrode;
- and
- a trench comprising a first trench portion and a second trench portion, the first trench portion comprising a second insulated gate electrode insulated from the body region and connected to the source metallization;
- the second trench portion comprising a conductive plug electrically connecting the source metallization with the body region.
2 more elements
A power semiconductor device comprising:
- a source metallization;
- a field-effect structure comprising a source region of a first conductivity type connected to the source metallization, a body region of a second conductivity type adjacent to the source region, a drift region of the first conductivity type adjacent to the body region and a first trench comprising an insulated gate electrode;
- and
- a second trench comprising a first trench portion and a second trench portion, the first trench portion comprising a second gate electrode connected to the source metallization and an insulating layer configured to insulate the second gate electrode from the body region;
- the second trench portion comprising a conductive plug electrically connecting the source metallization with the body region.
2 more elements
A method for forming a semiconductor device comprising:
- providing a semiconductor body comprising a first surface, a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region and the second semiconductor region forming a pn-junction;
- forming a trench such that the trench extends from the first surface into the semiconductor body and comprises, in a horizontal plane substantially parallel to the first surface, a first trench portion and second trench portion;
- forming a gate electrode and an insulating layer which insulates the gate electrode from the second semiconductor region in the first trench portion;
- forming a conductive plug in the second trench portion such that the conductive plug is connected with the second semiconductor region;
- and
- forming a source metallization on the first surface such that the source metallization is connected to the gate electrode and the conductive plug.
3 more elements
A semiconductor device comprising:
- a source metallization;
- a first field-effect structure including a source region of a first conductivity type, the source region being electrically connected to the source metallization;
- a body region of a second conductivity type adjacent to the source region;
- a first gate electrode and a first insulating region arranged at least between the first gate electrode and the body region, the first gate electrode, the first insulating region and the body region forming a first capacitance, the first capacitance having a first capacitance per unit area;
- a second field-effect structure including a source region of the first conductivity type;
- a body region of the second conductivity type adjacent to the source region;
- an electrode structure and a second insulating region which is, in a first vertical cross-section, arranged at least between the electrode structure and the body region, the source region and the electrode structure being electrically connected to the source metallization;
- the electrode structure, the second insulating region and the body region forming a second capacitance, the second capacitance having a second capacitance per unit area;
- and the second capacitance per unit area being larger than the first capacitance per unit area.
6 more elements
Dependencies are inferred from the claim text.