Semiconductor device
AssigneeInfineon Technologies Austria AG
InventorWolfgang Werner
Life of this patent
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Abstract
A semiconductor device is disclosed. One embodiment includes a trench within a semiconductor body and a gate insulating structure at opposing sidewalls within the trench. A gate electrode structure adjoins the gate insulating structure within the trench and a dielectric structure adjoins the gate electrode structure within the trench. The gate electrode structure is in contact with the semiconductor body at a bottom side of the trench and is electrically coupled to a drain zone over an element having a voltage blocking capability.
Claims25
A semiconductor device, comprising:
- a trench within a semiconductor body;
- a gate insulating structure at opposing sidewalls within the trench;
- a gate electrode structure adjoining the gate insulating structure within the trench;
- and
- a dielectric structure adjoining the gate electrode structure within the trench;
- wherein
- the gate electrode structure is in contact with the semiconductor body at a bottom side of the trench and electrically coupled to a drain zone over an element having a voltage blocking capability.
A semiconductor device, comprising:
- a trench within a semiconductor body;
- a gate insulating structure at opposing sidewalls within the trench;
- and
- a gate electrode structure adjoining the gate insulating structure within the trench, the gate electrode structure being formed of a polycrystalline or amorphous semiconductor material;
- wherein
- the gate electrode structure is in contact with the semiconductor body at a bottom side of the trench and electrically coupled to a drain zone over an element having a voltage blocking capability.
A method for manufacturing a semiconductor device, comprising:
- forming a trench within a semiconductor body;
- forming a gate insulating structure at opposing sidewalls within the trench;
- forming a gate electrode structure adjoining the gate insulating structure within the trench, the gate electrode structure being formed in contact with the semiconductor body at a bottom side of the trench;
- and
- electrically coupling the gate electrode structure at the bottom of the trench to a drain region over an element having a voltage blocking capability and forming a dielectric structure adjoining the gate electrode structure within the trench.
A method for manufacturing a semiconductor device, comprising:
- forming a trench within a semiconductor body;
- forming a gate insulating structure at opposing sidewalls within the trench;
- forming a gate electrode structure adjoining the gate insulating structure within the trench, the gate electrode structure being formed of a polycrystalline or amorphous semiconductor material in contact with the semiconductor body at a bottom side of the trench;
- and
- electrically coupling the gate electrode structure at the bottom of the trench to a drain zone over an element having a voltage blocking capability.
An integrated circuit comprising:
- a trench within a semiconductor body;
- a drift control zone comprising a gate insulating structure at opposing sidewalls within the trench, a gate electrode structure adjoining the gate insulating structure, and a dielectric structure adjoining the gate electrode structure, wherein the gate electrode structure is in contact with the semiconductor body on a bottom side of the trench and electrically coupled to a drain zone over an element having a voltage blocking capability;
- and
- a channel region adjacent the gate insulating structure and extending through a body region and a drift zone, between a source zone and the drain zone.
Dependencies are inferred from the claim text.