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US 2010/0301406 A1Published application
Zirconium-doped tantalum oxide films
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
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Abstract
Dielectric layers containing a zirconium-doped tantalum oxide layer, where the zirconium-doped tantalum oxide layer is formed of one or more monolayers of tantalum oxide doped with zirconium, provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
Claims20
A method comprising:
- forming tantalum oxide on a substrate using a self-limiting deposition process;
- doping the tantalum oxide with zirconium at different times during the self-limiting deposition process such that a zirconium-doped tantalum oxide is formed;
- and
- controlling the doping with zirconium to an amount such that the zirconium-doped tantalum oxide has a structure that does not differ significantly from an undoped tantalum oxide structure.
1 more element
An electronic device comprising:
- a substrate;
- and
- a zirconium-doped tantalum oxide above the substrate, the zirconium-doped tantalum oxide having a structure that does not differ significantly from an undoped tantalum oxide structure.
Dependencies are inferred from the claim text.