Semiconductor device with multiple gates and doped regions and method of forming

A semiconductor device comprising:

• a source region within a semiconductor substrate;
• a drain region within the semiconductor substrate;
• a control gate over the semiconductor substrate and between the source region and the drain region;
• a first gate between the control gate and the drain region;
• and
• a first doped region within the semiconductor region and between the control gate and the first gate.

A method of forming a semiconductor device, the method comprising:

• depositing an electrode material over the semiconductor substrate;
• patterning the electrode material to form a control gate and a first gate;
• implanting a first doped region within the semiconductor substrate between the control gate and the first gate while using the control gate and the first gate as a mask, wherein the first doped region has a first dopant concentration and a first polarity;
• implanting a source region within the semiconductor substrate, wherein the source region has a second dopant concentration and a second polarity, wherein the second dopant concentration is greater than the first dopant concentration and the second polarity is different than the first polarity;
• and
• implanting a drain region within the semiconductor substrate, wherein the drain region has the second polarity.