Schottky diode

A Schottky device, comprising:

• first and second terminals, wherein the first terminal comprises a Schottky contact;
• a JFET within the Schottky device having a current path of a first conductivity type serially coupled between the first terminal and the second terminal;
• multiple finger regions laterally outboard of the Schottky contact and of a second, opposite, conductivity type and substantially enclosing a portion of the current path between the first terminal and the second terminal, and;
• a buried region of the second conductivity type at least partly underlying the current path and ohmically coupled to the multiple finger regions;
• and
• wherein the multiple finger regions and the buried region are electrically coupled to the first terminal and adapted to at least partially pinch off the current path in response to a reverse bias applied between the first terminal and the second terminal.

A method for forming a Schottky diode, comprising:

• providing a semiconductor containing substrate having an upper surface;
• doping an upper portion of the substrate to have a first conductivity type extending substantially to the upper surface;
• providing multiple spaced-apart finger regions of a second, opposite, conductivity type, wherein first parts of the upper portion of the substrate lie between some of the spaced-apart finger regions;
• forming a buried further region of the second, opposite, conductivity type underlying at least part of the first parts of the upper portion;
• forming a Schottky contact on a part of the upper surface lying for the most part laterally beyond the spaced-apart finger regions;
• and
• coupling the spaced-apart finger regions and the further buried region to the Schottky contact and to a first terminal of the device;
• and
• coupling a second part of the upper portion to a second terminal of the device.