Sensitive field effect transistor apparatus
AssigneeChang Gung University
InventorsChao-Sung Lai, Cheng-En Lue, Chia-Ming Yang, Szu-Chieh Wang
Life of this patent
Estimating the term…
Abstract
The invention discloses a sensitive field effect transistor apparatus, which uses the inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of sensitive membrane on hydrogen ion is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. The differential amplifier is used to read signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus.
Claims16
A sensitive field effect transistor apparatus, comprising:
- an inorganic ion sensitive field effect transistor;
- and
- a reference field effect transistor connected to the inorganic ion sensitive field effect transistor to form the sensitive field effect transistor apparatus.
A sensitive field effect transistor, comprising:
- a semiconductor substrate of a p-type silicon chip, a n-well formed in the p-type silicon chip:
- a first electrode being formed in the n-well, which being formed by a first source, a first drain and a first n-type ion;
- a first metal wire being connected to a surface of the first electrode;
- a first silicon dioxide being formed on a surface of the p-type silicon chip between the first electrode and the first metal wire;
- a first hydrogen ion sensitive membrane being formed on a surface of the n-well;
- and
- a first photo resistance layer being formed on a surface of the first silicon dioxide and a surface of the first metal wire to form the inorganic ion sensitive field effect transistor;
- the semiconductor substrate of the p-type silicon chip, a p-well formed in the p-type silicon chip:
- a second electrode being formed in the p-well, which being formed by a second source, a second drain and a second p-type ion;
- a second metal wire being connected to a surface of the second electrode;
- a second silicon dioxide being formed on a surface of the p-type silicon chip between the second electrode and the second metal wire;
- a second hydrogen ion sensitive membrane being formed on a surface of the p-well;
- and
- a second photo resistance layer being formed on a surface of the second silicon dioxide and a surface of the second metal wire to form the inorganic reference field effect transistor;
- a third silicon dioxide being formed on a surface of the p-type silicon chip;
- a third metal wire being formed at both sides of the third silicon dioxide;
- a quasi reference electrode being formed on a surface of the third silicon dioxide;
- and
- a third photo resistance layer being formed on the surface of the third silicon dioxide and a surface of the third metal wire around both sides of platinum to form the sensitive field effect transistor.
Dependencies are inferred from the claim text.